jiangsu changjiang electronics technology co., l td wbfbp-03e plastic-encapsulate mosfets CJAA3139K p-channel mosfet wbfbp-03e feature z lead fre e product is acquired z surface mount package z p-channel switch with low r ds (on) z operate d at low logic level gate drive z esd protected gate z complementary to cjaa3134k marking: absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol v a lue unit drain-s ourc e voltag e v ds -20 v gate-source voltage v gs 12 v continuous drain c u rrent (note 1) i d -0.66 a pulsed drain c u rrent (tp=10us) i dm -1.2 a power diss i pation (note 2) p d 100 mw t hermal resist ance from jun c tion to ambie n t (note 1) r ja 125 0 /w junctio n t e mperature t j 150 storage temperature t stg -55~ 150 lead temperature for sold eri ng purposes(1/8?? from case for 10 s) t l 260 1.gate 2.source 3.drain www.cj-elec.com 1 b , nov ,201 6 equivalent circuit application z load/ powe r switching z interfacing switching z battery management for ultra small porta ble electronics z logic level shift v (br)dss r ds(on) max i d -20v 52 0 m @ -4.5v -0.66a ? 70 0 m @-2.5v 95 0 m @-1.8v
parameter symbol te st condition min typ max unit stat ic p arameters drain-source b reakdown voltage v (br)dss v gs = 0v, i d =- 250 a -20 v zero gate volta ge drain current i dss v ds =-20v,v gs = 0v -1 a gate-body leak age curr ent i gss v gs =12v, v ds = 0v 20 ua gate threshold voltage ( note 2) v gs(th) v ds =v gs , i d =-250a -0.35 -1.1 v drain-source o n-resistance (note 2) r ds(on) v gs =-4.5v, i d =-1a 520 m ? v gs =-2.5v, i d =-0.8a 700 m ? v gs =-1.8v, i d =-0.5a 950 m ? forw ard tranconductance (note 2) g fs v ds =-10v, i d =-0.54a 1.2 s diode for w ard voltage v sd i s =-0.5a, v gs = 0v -1.2 v dynam i c parameters(note 4) input capacita nce c iss v ds =-16v,v gs =0v,f =1mhz 113 170 pf output capacitance c oss 15 25 pf reverse tr ansfer capac itance c rss 9 15 pf switching para m eters (note 4) turn-on dela y time (note 3) t d(on) v dd =-4.5v,v gs =-10v, i d =-200ma,r gen =10 ? 9 ns turn-on rise time (note 3) t r 5.8 ns turn-off delay t ime (note 3) t d(of f ) 32.7 ns turn-off fall time (note 3) t f 20.3 ns notes : 1.surface mou nted on fr4 board using the minimum recommended pad size. 2. pulse test : pulse width=300 s, duty cycle 2%. 3. switching characteristics are indep endent of operating junction temperatures. 4. graranted by design not subject to producting. mosfet electrical characteristics a t =25 unless otherwise specified www.cj-elec.com 2 b , nov ,201 6
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